发明名称 |
Method of fabricating semiconductor device having stacked-layered substrate |
摘要 |
A method of fabricating a light valve device comprises forming a substrate having stacked layers including a light-shielding thin film layer, an insulating film, and a single crystalline semiconductor thin film stacked in this order on a transparent support substrate. A light-shielding layer pattern is formed by selectively etching the stacked layers. Thereafter, a switching element is formed comprised of a transistor having a channel region formed in the single crystalline semiconductor thin film and a main gate electrode covering the channel region. The channel region is provided over the light-shielding pattern layer to prevent light incident from the transparent support substrate from illuminating the channel region to suppress a photo-induced leakage current in the channel region. A transparent electrode is formed and is electrically connected to the switching element. An opposing substrate is then provided over the substrate at the side of the single crystalline semiconductor thin film, and an electro-optical material layer is interposed between the substrate and the opposing substrate.
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申请公布号 |
US6040200(A) |
申请公布日期 |
2000.03.21 |
申请号 |
US19970834168 |
申请日期 |
1997.04.14 |
申请人 |
AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY;SEIKO INSTRUMENTS INC. |
发明人 |
HAYASHI, YUTAKA;KAMIYA, MASAAKI;KOJIMA, YOSHIKAZU;TAKASU, HIROAKI |
分类号 |
G02F1/136;G02F1/1335;G02F1/1362;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L21/86;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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