| 发明名称 |
Improvement to the anisotropic chemical etching process of silicon oxide in the manufacture of mos transistor flash eprom devices |
| 摘要 |
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| 申请公布号 |
SG71131(A1) |
申请公布日期 |
2000.03.21 |
| 申请号 |
SG19980001761 |
申请日期 |
1998.07.13 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED;CONSORZIO EAGLE |
发明人 |
RUSSO FELICE;CHINTAPALLI KOTESWARA RAO;MICCOLI GIUSEPPE;TORSI ALESSANDRO;CAUTIERO GIUSEPPE |
| 分类号 |
H01L21/311;H01L21/314;H01L21/8247;(IPC1-7):H01L21/311;H01L21/318;H01L21/824 |
主分类号 |
H01L21/311 |
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代理人 |
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