发明名称 METHOD FOR EVALUATING FAULT OF INSULATING FILM
摘要 <p>PROBLEM TO BE SOLVED: To analyze a trace amount of noble metal in an electrolyte solution on a surface of an insulating film by previously forming another noble metal or noble metal oxide film on the surface of the film, and applying a negative voltage equal to the film in the solution containing the noble metal. SOLUTION: Noble metal is used as a metal component of metal ion or a metal complex of an electrolyte solution E, and another noble metal film or noble metal oxide film is previously formed on a surface of an insulating film. When a voltage is applied so that an electrode 5a becomes a negative electrode and an electrode 5b becomes a positive electrode, a voltage is applied equally to an insulating film 12 via the electrode 5a. A difference of current values occurs locally according to the presence or absence of a fault 13, the noble metal component in the solution E starts to be analyzed on the surface of the film 12 at a position corresponding to the fault 13, and a spot is formed caused by the analyzed metal 14. A sample substrate 6 in which the metal is deposited at the position corresponding to the fault 13 can be observed by an optical microscope, a scanning electron microscope or the like.</p>
申请公布号 JP2000082727(A) 申请公布日期 2000.03.21
申请号 JP19980251076 申请日期 1998.09.04
申请人 TOSHIBA CORP 发明人 MATSUNAGA HIDEKI;SUZUKI ISAO
分类号 G01N23/04;G01N21/88;G01N21/956;G01N27/26;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01N23/04
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