| 摘要 |
<p>PROBLEM TO BE SOLVED: To make the opening side of a light shielding film uniform within the plane. SOLUTION: A resist film 4 is formed on a quartz substrate 2 on which the light shielding film 3 is formed (a). This resist film 4 is patterned by executing development by a spraying method after electron ray exposure (b). The flow rate of the developer in development is controlled (the flow rate is decreased), by which the resist film opening size 101 in the peripheral part is made smaller than the opening size in the central part. The light shielding film 3 is patterned by RIE (c). The light shielding film opening size 102 in the peripheral parts tends to be formed larger than the opening size in the central part with RIE, but the resist patterns are previously so formed as to offset this tendency and, therefore, the light shielding film opening size 102 is made uniform within the plane. The resist film 4 is peeled and removed (d).</p> |
