| 摘要 |
PROBLEM TO BE SOLVED: To provide a continuous treatment method and a device with which a vacuum treatment process and an atmospheric treatment process can be excellently integrated. SOLUTION: A load lock chamber 1 used to introduce a non-treated wafer into a vacuum atmosphere, an unload lock chamber 2 used to take out a treated wafer into the atmospheric air; chambers 3, 4 and 5, where the wafer is treated for etching, ashing and CVD; and a load lock chamber 6 which is used to carry in and out between the vacuum atmosphere and the atmospheric treatment atmosphere are connected to a vacuum carrying chamber 9 provided with a carrying device 8 which performs the carrying of the wafer between the above- mentioned chambers through gate valves 7a to 7g; are provided in this continuous treatment device. A washing chamber 10 to be used to wash the wafer under low pressure through a gate vale 7i is connected to the load lock chamber 6. |
