SCANNING PROBE, DEVICE USING IT, AND SEMICONDUCTOR DEVICE AND FINE-STRUCTURED ELEMENT MANUFACTURED BY DEVICE

摘要

PROBLEM TO BE SOLVED: To appropriately maintain the performance of a scanning probe used for evaluating and forming a fine-structured pattern of nanometer or less for a long time. SOLUTION: A wafer 65 that is coated with a resist 33 is placed on a stage 72, and also an ultraviolet-ray irradiation means 86 for washing a probe 62 for alignment where a film that causes photocatalysis reaction with ultraviolet rays is formed at a tip part surface and a probe 95 for exposure and provided. The scattered light of near-field light 68 being generated from irradiation light 74 being applied to an alignment mark 61 from an excitation light irradiation means 71 is guided to a detector 137 via a fiber 87 of the probe 62 for alignment. Exposure light generated by an exposure light source 91 is guided via fiber 92, and is leaked from the tip part of the probe 95 for exposure as near- field light 98.