| 摘要 |
A method of analyzing the operation of a semiconductor device by solving simultaneous equations consisting of electron- and hole-transport equations and Poisson's equation, by means of a computer, thereby to accomplish the modeling of the semiconductor device. The method comprises the steps of: rewriting simultaneous equations to the following equations (a), (b), (c) containing artificial time differential terms dp/dt, dn/dt, d psi /dt and sensitivity coefficients lambda p, lambda n, and lambda psi :dp/dt=- lambda pfp(a)dn/dt= lambda nfn(b)d psi /dt= lambda psi f psi (c)determining meshpoints (M,N) of the semiconductor device, and imparting spatial position dependency, which is appropriate for the physical properties of the semiconductor device, to the sensitivity coefficients lambda p, lambda n, and lambda psi , thereby transforming equations (a), (b) and (c) to the following equations (d), (e) and (f):dp(M,N)/dt=- lambda p(M,N)fp(M,N)(d)dn(M,N)/dt= lambda n(M,N)fn(M,N)(e)d psi (M,N)/dt= lambda psi (M,N)f psi (M,N)(f)time-integrating equations (d), (e) and (f), thereby obtaining the solutions of simultaneous equations.
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