| 摘要 |
Disclosed herein is a method for forming a copper interconnect in which a substrate having the copper interconnect is exposed to atmosphere after the substrate is cooled to a temperature below 160 DEG C. under a non-oxidizable atmosphere. The exposure of the substrate to a relatively high temperature conventionally makes an electric resistance between interconnects on the substrate higher to prevent high integration. In accordance with the present invention, the above electric resistance can be reduced to smoothly realize the high integration because of the exposure of the substrate to a relatively low temperature.
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