发明名称 |
Method of manufacturing shallow trench isolation |
摘要 |
A method is described for manufacturing shallow trench isolation. The method comprises the steps of providing a substrate having a pad oxide layer, a mask layer, a trench penetrating through the mask layer and the pad oxide and into the substrate and a first liner oxide layer in the trench. A portion of the first liner oxide layer is stripped away to expose the bottom corner of the mask layer. A portion of the mask layer is stripped away to expose the top corner of the first oxide layer. The first liner oxide layer is removed to expose the surface of the trench. A second liner oxide layer is formed on the sidewall and the base surface of the trench and the trench is filled with an insulating material to form a shallow trench isolation.
|
申请公布号 |
US6040232(A) |
申请公布日期 |
2000.03.21 |
申请号 |
US19990236955 |
申请日期 |
1999.01.25 |
申请人 |
UNITED SEMICONDUCTOR CORP. |
发明人 |
GAU, JING-HORNG |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|