| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a capacitor which can suppress the leakage current which becomes an obstacle to fine wiring and which uses one of impurity diffused layers as a capacitor electrode. SOLUTION: First, a natural oxide film 2 formed on the surface of a silicon substrate 1 is removed. Next, arsenic is doped into the surface of the silicon substrate 1 to form an n-type impurity diffused layer 3 as a lower capacitor electrode. On the surface of the n-type impurity diffused layer 3, an oxide film is not grown but a silicon nitride film 4 is formed as a capacitor insulation film. Finally, an upper capacitor electrode 5 is formed on the silicon nitride film 4.
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