| 摘要 |
PROBLEM TO BE SOLVED: To reduce the adverse influence of a short channel effect, to reduce the number of steps and to obtain a semiconductor device having high performance by forming the gate electrode of a NMOS transistor in an N type and forming the gate electrode of a PMOS transistor in a P type. SOLUTION: The semiconductor device comprises a PMOS transistor having a drain in which a first voltage VDD is applied, an NMOS transistor having a gate connected to a gate of the PMOS transistor, an NPN bipolar transistor having a collector in which the voltage VDD is applied, and a PNP transistor having a collector in which a second voltage GND is applied. In this case, a gate electrode of the NMOS transistor is formed in an N type and a gate electrode of the PMOS transistor is formed in a P type. Thus, variations of a circuit design are increased, and a high speed operation can be performed with a lower voltage.
|
