METAL ELECTRICAL CONTACT FOR HIGH CURRENT DENSITY APPLICATION IN LED AND LASER DEVICES

摘要

Light-emitting semiconductor device such as a laser or LED includes a light-emitting region interposed between two GaN contact layers of different conductivity types. A metal electrical contact is provided directly on one of the contact layers and is formed of an annealed, at least partly alloyed metal layer inlcuding hafnium and gold. The metal layer may also include platinum, or platinum and titanium. Light-emitting semiconductor devices such as light-emitting diodes and lasers having such annealed, at least partly alloyed metal layer are particularly suitable for high current-density applications which result in higher operating temperatures, such they are capable of operating at higher temperatures without shorting.