| 摘要 |
An apparatus for growing a single crystal according to the CZ method which has a structure for gripping the lower end of a portion expanded in diameter of a single crystal formed below a seed crystal (3), characterized in that contacting members (9A and 9B) having a Shore hardness of a surface of 70 or more, a Vickers hardness of 100 or less and a tensile strength of 400 Mpa or more are disposed at single crystal-contacting portions of gripping members (8A and 8B) which grip the lower end of the portion expanded in diameter of the single crystal (4). This apparatus can be used for growing a single crystal without causing a damage to a habit line of a single crystal, without a danger of deformation or delamination by a load imposed even in the case of as much as 400 kg of the single crystal, in a stable state, and without generating a dislocation through a damage of a habit line.
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