METHOD AND DEVICE FOR CUTTING AND MIRROR FINISHING SINGLE CRYSTAL SILICON CARBIDE

摘要

A device for cutting and mirror finishing a single crystal SiC comprising a metal bonded wheel (10) consisting of a flat sheet portion (10a) rotating on the axis Z and a taper portion (10b) provided on the outer side of the flat sheet portion and gradually thinning toward the outer sides, an electrode (13) facing the metal bonded wheel with a gap therebetween, a voltage application means (12) for applying a dc pulse voltage between the wheel and the electrode with the wheel as a positive electrode, a working fluid supplying means (14) for supplying a conductive working fluid (15) between the wheel and the electrode and a wheel moving means (16) for moving the wheel in a direction perpendicular to the axis of the wheel, wherein the taper portion (10b) of the wheel cuts a single crystal SiC ingot (1) and then the flat sheet portion (10a) mirror finishes the cut face, whereby it is possible to slice the single crystal SiC ingot into flat sheets efficiently and finish the cut faces to mirror-face-like flatness.