发明名称 |
Halbleitende Emissionsvorrichtung mit schneller Wellenlängenmodulation |
摘要 |
The separation of the electrodes (17, 18, 19) is obtained by reactive ion beam etching and chemical attack and deep etching produces a separation resistance of 2 kiloohm. Protons are introduced in the sides of the strip forming the active region (13, 14) and the absorbent region to reduce the current loss and the stray capacitance. Semi-insulating InP layers may be located either side of the strip. The absorbent region (16) comprises multiple quantum wells. It is controlled by an inverted voltage (-V) which almost instantaneously modifies the rate of absorption and the laser is polarised in such a way that there is a laser effect when the voltage is zero. Selective epitaxy on the surface is used to manufacture the absorption region. |
申请公布号 |
DE69606596(D1) |
申请公布日期 |
2000.03.16 |
申请号 |
DE1996606596 |
申请日期 |
1996.09.05 |
申请人 |
FRANCE TELECOM |
发明人 |
NAKAJIMA, HISAO;CHARIL, JOSETTE;SLEMPKES, SERGE |
分类号 |
H01S5/026;H01S5/0625;H04B10/155;(IPC1-7):H01S5/06;H01S5/02;G02F1/015;H04J14/02 |
主分类号 |
H01S5/026 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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