| 摘要 |
PURPOSE:To provide a ceramic material having high hardness and excellent heat-resistance and provide a process for the synthesis of the ceramic material at low temperature. CONSTITUTION:A gas containing aluminum bromide, nitrogen gas and dinitrogen monoxide gas are supplied through a multiple pipe 6 and mixed in a reaction chamber A. The mixed gas is converted into a plasma by electric discharge with microwave to deposit a film on the surface of a substrate 3. In the above process, the flow rate of the nitrogen gas and that of the dinitrogen monoxide gas are varied in such a manner as to keep the deposition condition at nearly the boundary condition between the condition to synthesize a non-oriented crystalline aluminum nitride and the condition to synthesize an amorphous aluminum oxynitride. An Al-O-N composite material containing AlN, Al2O3 and Al9N7O3 in mixed state can be synthesized by this process. |
