| 摘要 |
<p>Method of fabricating a high power RF lateral diffused MOS transistor (LDMOS) having increased reliability includes fabricating an N-drift region for the drain prior to fabrication of the gate (24) contact and other process steps in fabricating the transistor. The resulting device has reduced adverse effects from hot carrier injection including reduced threshold voltage shift over time and reduced maximum current reduction over time. Linearity of device is maximized along with increased reliability while channel length (2) is reduced.</p> |
