Etching process, especially for forming a tungsten wiring structure or barrier metal for a thin film resistor, comprises oxidizing and then removing a tungsten thin film region with an alkaline solution

摘要

In an etching process, a region (38a) of a tungsten thin film (38) is oxidized and then removed with an alkaline solution. Independent claims are also included for the following: (i) an etching process comprising structuring a tungsten-containing electrode material (38), oxidizing the resulting residue (38a) and removing the residue; and (ii) semiconductor structure production processes involving the above etching process. Preferred Features: The alkaline solution contains an organic amine.