| 摘要 |
An apparatus for and method of producing a single crystal of a high dissociation pressure compound such as GaAs. The producing apparatus comprises: an openable sealed vessel (20) housed in an outer vessel (78) and having a tubular portion, top plate portions (22A) for blocking opposite ends of the tubular portion and a bottom portion (42); vessel heating means (36, 38 and 40) for heating the sealed (20); and a steam pressure control section whose inner space communicates with an inner space of the sealed vessel (20). The steam pressure control section comprises: a steam pressure control vessel (98) obtained by defining an air-tight inner space S between a cylindrical inner wall portion (102) and a cylindrical outer wall portion (100), which are concentric with each other; a communicating means (96) for establishing communication between this steam pressure control vessel (98) and the sealed vessel (20); heat pipes (108, 112) disposed along at least one of the inner wall portion and the outer wall portion of the steam pressure control vessel (98); and control section heating means (110, 114), which are disposed inside the inner wall portion and outside the outer wall portion of the steam pressure control vessel (98), respectively. <IMAGE> |
