METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device having an interlayer insulating film of, e.g., fluorine-added carbon by a simple dual damascene method. An insulating film, e.g., an SiO2 film (3) is formed on a substrate (2), a via hole (31) is made in the SiO2 film (3) by etching, and an upper insulating film, e.g., a CF film (4) is formed over the SiO2 film (3). If the CF film is formed by means of a plasma created from a film forming material having a bad buriability, e.g., C6F6 gas, the CF film is prevented from being buried in the via hole (31) and the CF film (4) is formed over the SiO2 film (3). A trench (41) is made in the CF film (4) by etching, enabling easy formation of a dual damascene having the trench (41) and the via hole (31) integrally continuous with the trench (41).