| 摘要 |
An apparatus and method for manufacturing semiconductor devices, by which single-layer films and multilayer films of improved qualities can be formed by performing in succession different kinds of processings without exposing wafers to the air. By reducing the changes in the temperature of the wafers between respective processings, the generation of thermal strains is prevented, and the changes and deteriorations of the film qualities are prevented. The apparatus is provided with a film forming part (11) having gas diffusing means (22) for feeding reaction gases, a processing part (12) having processing means (28) for processing the formed film, and a wafer holding means (15). The wafer holding means (15) holds a wafer (29) on a wafer mounting face (13), opposing the wafer to the gas diffusing means (22) or the processing means (28), and can move, keeping this state, between the film forming part (11) and the processing part (12). Further, the wafer holding means (15) has a heating means (14) which can heat the wafer (29) held on the wafer mounting face (13), even while the wafer (29) is moving. The apparatus and method are useful as the ones for manufacturing semiconductor devices, such as so-called multistep process apparatuses, which perform in succession the processings for forming different kinds of films without exposing wafers to the air. <IMAGE> |
