Siliziumcarbid-Junction-Feldeffekttransistor

摘要

The invention relates to a lateral silicon carbide junction field effect transistor, wherein p and n type conductivity silicon carbide layers (3, 4) are provided in pairs in lateral direction in a silicon carbide body (1, 2), on whose main surface trenches for the source (S), drain (D) and gate (G) areas have been made, which are filled with silicon carbide having different types of conductivity for the source and the drain areas and for the gate area.