Stabilized magnetic memory cell

摘要

A stabilized magnetic memory cell including a data storage layer 50 having an interior region and a pair of end regions 57-58 near a pair of opposing edges of the data storage layer 50 and a stabilizing material 55-56 that pins a magnetization in the end regions 57-58 to a predetermined direction. A method for stabilizing a magnetic memory cell includes the steps of applying a magnetic field that rotates a magnetization in a pair of opposing side regions of a data storage layer 50 of the magnetic memory cell toward a predetermined direction and that reduces free poles in a pair of opposing end regions 57-58 of the magnetic memory cell, thereby reducing the likelihood of unpredictable switching behavior in the end regions 57-58. <IMAGE>