METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: The method improves the productivity according to the fabrication of a semiconductor device by taking an appropriate measure when an inferiority occurs in forming a BPSG film. CONSTITUTION: The method is to form a BPSG film used as an interlayer insulation film. The method is to form an oxide film and a BPSG film in sequence on a semiconductor substrate where a pattern including a gate structure is already formed. In case that an inferiority occurs in forming the BPSG film, after removing the inferior source and BPSG film using HF solution weakened in a deionized water by 90:1 or 100:1, then a BPSG is formed again on the oxide film revealed by the removal of the BPSG film.