METHOD FOR FABRICATING ELECTRO STATIC DISCHARGE PREVENTION CIRCUIT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: The present invention is intended to provide a circuit preventing electrostatic discharge of a semiconductor device having a simple structure and a good electrostatic discharge tolerance. CONSTITUTION: The method increases the electrostatic discharge tolerance by forming a junction having a low breakdown voltage with an additional ion implantation. The method comprises the steps of: forming an isolation film(20) for the isolation between devices on a substrate(10); forming a junction(30) of a source drain region through ion implantation of high density between the isolation film; forming an ion layer(40) by implanting ion of low density into the front between the isolation film to form the junction having a low breakdown voltage; forming an insulation film(50) on the whole surface after the ion layer formation, and forming a contact(60) to be connected with the junction; and forming a pad(70) and a power terminal(70') after depositing a conductive layer on the contact.