METHOD FOR FORMING A SILICIDED SELF-ALIGNED CONTACT

摘要

PURPOSE: A method for forming a silicided self-aligned contact is provided, which forms a silicided gate and source/drain without an additional photo process and successively forms a self-aligned contact. CONSTITUTION: The method for forming a silicided self-aligned contact comprises the steps of: forming a gate mask layer (106) and a gate spacer (110) as a material having an etch selectivity; selectively removing the gate mask layer (106) to the gate spacer (110); forming a silicide film (114a) on a gate conductive film (105) using a silicide process; successively depositing a material having an etching selectivity with the gate spacer (110) and a layer insulating film (118) on a front surface of a semiconductor substrate (100); and successively etching the layer insulating film (118) and the material layer (116) and forming a contact hole (122). Thereby, it is possible to successively form the self-aligned contact without the additional photo process.