| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor integrated circuit is provided to improve capacitor characteristics by prevent damage of a dielectric film in a radio frequency sputter etching process. CONSTITUTION: The method comprises the steps of forming a first conductive layer on an insulating substrate, sequentially forming a dielectric film and an etch-stop layer of a conductive material in a capacitor forming region on the conductive layer, selectively etching the first conductive layer to simultaneously forming a lower electrode and a first wiring pattern, forming an interlayer insulating film on an overall surface of the above resultant, selectively etching the interlayer insulating film to expose a surface of the etch-stop layer and a surface of the first wire pattern to form a first and a second via holes therein, performing a radio frequency sputter etching process, forming a conductive plug in the first and the second via holes, forming a second conductive layer on the interlayer insulating film including the conductive plug, and selectively etching the second conductive layer to simultaneously form a second wiring pattern and an upper electrode having a stack structure of a conductive plug and a conductive layer pattern.
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