METHOD FOR FORMING A CAPACITOR IN A MEMORY CELL IN A DRAM,申请号KR19960019943-传众专利搜索

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发明名称	METHOD FOR FORMING A CAPACITOR IN A MEMORY CELL IN A DRAM
摘要
申请公布号	KR100246649(B1)	申请公布日期	2000.03.15
申请号	KR19960019943	申请日期	1996.05.31
申请人	NEC CORPORATION	发明人	HIROTA, TOSIUKI;GUROGAWA, TOMOMI;JENKEN, ASANOV;YOKOTA, GAJUKU
分类号	G03F7/20;H01L21/02;H01L21/027;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;(IPC1-7):H01L27/108	主分类号	G03F7/20
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