| 摘要 |
PURPOSE:To obtain a hetero-junction field-effect transistor whose carrier mobility is improved, by transforming a channel layer into a pseudo quantum line. CONSTITUTION:In a hetero-junction field-effect transistor having a channel layer, a lattice type semiconductor layer (InAs layer) 7 whose forbidden bandwidth is narrower than that of a channel layer (GaAs layer) 3 is inserted into the positional vicinity in a channel layer wherein carrier existence probability in the ground state is maximum and existance probability in the first excitation state is zero. Carrier mobility in the parallel arrangement direction of the semiconductor layer (InAs layer) 7 is large. |
