SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

PURPOSE: The method reduces the junction leakage in salicide process by preventing the revealing of a substrate in the boundary between an active and a field area due to the loss of an isolation in etch back process, and improves the reliability of a device by preventing the destruction of a source/drain impurity region by depositing a nitride film before forming the source/drain impurity region. CONSTITUTION: The semiconductor device includes; a semiconductor substrate(31) defined as an active area and a field area; an isolation(32) formed in STI(Shallow Trench Isolation) structure with a step on the active surface and the field top part of the semiconductor substrate; a gate electrode(34a) formed by intervening a gate insulation film(33) on the active area separated by the isolation; a first side wall(34b) formed on both sides of the gate electrode; a second side wall(36) formed on both sides both sides of the semiconductor substrate revealed by the step of the isolation; a source/drain impurity region(37) formed on the semiconductor substrate on both sides of the gate electrode; and a salicide film(38) formed on the surface of the gate electrode and on the surface of the second side wall and the semiconductor substrate where the source/drain impurity region is formed; and an insulation film(39) which has a contact hole(40) to reveal some of the surface of the salicide film where the source/drain impurity region is formed and is formed on the front of the semiconductor substrate.