METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND MASK USED THEREOF

摘要

PURPOSE: The method can form a wire area and a contact hole simultaneously using one mask, and the mask can form two pattern of different depth simultaneously. CONSTITUTION: The method comprises the steps of: forming a first insulation layer(102), a first etch stop layer(104), a second insulation layer(106) and a second etch stop layer(108) in sequence on a semiconductor substrate(100); forming a photoresist film pattern(110) on top of the second etch stop layer using a mask formed to have different transmittance in an area where a wire is formed and in an area where a contact hole is formed; removing the photoresist film pattern, after blanket etching; and forming a wire area(118) and a contact hole(120) simultaneously by etching the first and second insulation layer using the first and second etch stop layer as an etch mask. The method can prevent the misalign between the wire area and the contact hole and can simplify the process by reducing one photolithography.