FERROELECTRIC MEMORY CAPACITOR AND FORMING METHOD THEREOF

摘要

PURPOSE: A ferroelectric memory capacitor and forming method thereof are provided to compensate a negative electric charge reduced according to oxygen vacancy. CONSTITUTION: The capacitor comprises a lower electrode, a ferroelectric layer formed on the lower electrode and an upper electrode formed on the ferroelectric layer. A first doping layer is formed between the lower electrode and the ferroelectric layer and having an atom to compensate a negative electric charge according to oxygen vacancy generated in the ferroelectric layer. A second doping layer is formed between the ferroelectric layer and the upper layer and having an atom to compensate a negative electric charge according to oxygen vacancy generated in the ferroelectric layer.