| 摘要 |
PURPOSE: A thin film transistor structure for a LCD is provided, which prevents the reliability decrease of a poly silicon LCD. CONSTITUTION: The thin film transistor structure for a LCD comprises: a poly silicon pattern (30) to be formed on a substrate (10), including a source and drain region (32, 34) to be doping in a high density, a channel region (36) to be located between the source and drain region (32, 34) and be not doping, and a LCD region (38) to be located between the channel region (36) and be doping in a low density; a gate insulating film (40) to be formed on the poly silicon pattern (30); a gate electrode (50) to be formed on the gate insulating film (40) of an upper portion of the channel region (36); and a conductive spacer (60) to be adjacent to the gate electrode (50) and be formed the gate insulating film (40) of an upper portion of the LCD region (38). Thereby, it is possible to prevent the reliability decrease by a hot carrier and a self heating.
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