METHOD OF FORMING TRENCH OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: The method is to form a trench isolation capable of forming a STI(shallow trench isolation) in a silicon substrate by a simple process, as suppressing the dishing phenomenon. CONSTITUTION: The method comprises the steps of: stacking a first insulation layer(110), a silicon film(120) and a second insulation layer(130) in sequence on a semiconductor substrate(100); forming a trench mask pattern, by etching a part of the first insulation layer, the silicon film and the second insulation layer until the substrate is revealed; forming a trench by etching the revealed part of the substrate using the trench mask pattern as a mask; depositing a trench filling material(150) on the front of the substrate including the trench; performing blanket etching of the trench filling material until the entrance part of the trench is revealed, and forming a crack on the trench filling material on the second insulation layer by laser annealing; and removing the silicon film and the first insulation layer after removing the trench filling material on the second insulation layer.