发明名称 |
Method for reclaiming wafer substrate |
摘要 |
<p>A method for reclaiming a wafer substrate material having a metallic film and an dielectric film includes a step for removing the entire metallic film and a part of the dielectric film with a chemical etching agent so as not to substantially dissolve the wafer substrate material itself, a step for removing the residual dielectric layer and the degenerated zone beneath the surface of the substrate by chemical-mechanical polishing, and a step for polishing at least one surface of the substrate.</p> |
申请公布号 |
EP0986097(A2) |
申请公布日期 |
2000.03.15 |
申请号 |
EP19990306853 |
申请日期 |
1999.08.27 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO;KOBE PRECISION INC. |
发明人 |
HARA, YOSHIHIRO;SUZUKI, TETSUO;TAKADA, SATORU;INOUE, HIDETOSHI |
分类号 |
H01L21/30;H01L21/304;H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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