METHOD FOR MANUFACTURING A CAPACITOR USING A HALF SPHERE SILICON (HSG)

摘要

PURPOSE: A method for manufacturing a capacitor using a half sphere silicon (HSG) is provided, which can prevent an electric short between storage nodes. CONSTITUTION: The method for manufacturing a capacitor using a half sphere silicon (HSG) comprises the steps of: forming a layer insulating film (20) on a semiconductor substrate (10); partially etching the layer insulating film (20) to form a contact hole (25); forming a conductive layer (30) on the layer insulating film (20); patterning the conductive layer (30) to forming a storage node; forming HSG films (60)(60a) on a surface of the storage node exposed on an upper portion of the layer insulating film (20); and performing a stability of the surface layer of the storage node and the crystal state of HSG films (60)(60a). Thereby, it is possible to stably obtain the characteristic and the yield rate of a DRAM cell.