发明名称 |
PAD STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD THEREOF |
摘要 |
PURPOSE: A pad structure of semiconductor device and method thereof are provided to easily achieve a probing and reduce an yield loss due to metal particles by forming a low stepped region in the pad. CONSTITUTION: The pad formation method comprises the steps of forming a groove (101) used as a low stepped region of pads by etching a portion of a semiconductor substrate (100); sequentially forming an insulating layer (102) and a metal wire (104) on the resultant structure; and patterning the metal wire (104), thereby forming pads (106) including the groove (101). By forming the groove (101) in the pads (106), the probing operation is to be easy and reduce the yield loss by minimizing the movement of probe card.
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申请公布号 |
KR20000014602(A) |
申请公布日期 |
2000.03.15 |
申请号 |
KR19980034094 |
申请日期 |
1998.08.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, YOUNG-DAE |
分类号 |
H01L23/48;H01L23/488;(IPC1-7):H01L23/488 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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