METHOD FOR FORMING THIN FILM OF SEMICONDUCTOR DEVICE USING SLOPE

摘要

PURPOSE: The method forms a thin film of a semiconductor device using a slope capable of obtaining good step coverage through the desired whole area. CONSTITUTION: A thin film(48) is formed as varying the state between source particles(46) for the thin film formation and a substrate(40) to a vertical state and to a sloped state. The thin film is formed by controlling the vertical state and the sloped state appropriately. In case that the thin film is formed in the vertical state, the thin film is formed by rotating the substrate on the center of an axis vertical to the substrate in he vertical state. By doing so, an equal opportunity to form the thin film is given to the bottom and to the side of a contact hole(44). Thus, the formation of the thin film having a uniform thickness over the whole surface is enabled and the step coverage of the thin film is improved. Thus, the method can suppress the oxide diffusion of a plug material in the process of forming a plug in the contact hole and can proceed more stable plug formation process by making the deposition thickness of a side of a layer deposited in the initial low temperature thick sufficiently in a hot temperature fill process.