| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
<p>A semiconductor device comprising a first electrically conductive layer formed on a semiconductor element or on one main surface of a semiconductor substrate, an insulating layer formed on said first electrically conductive layer through which a connection hole of which diameter is the smallest in a portion other than the bottom is formed, and a second electrically conductive layer formed on said insulating layer.</p> |
| 申请公布号 |
KR100246485(B1) |
申请公布日期 |
2000.03.15 |
| 申请号 |
KR19960010799 |
申请日期 |
1996.04.10 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MAEKAWA, KAZUYOSHI |
| 分类号 |
H01L21/3205;H01L21/768;H01L23/522;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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