发明名称 CIRCUIT FOR PREVENTING PROCESS FAILURE FOR ION INJECTION EQUIPMENT
摘要 PURPOSE: A circuit for preventing process failure for ion injection equipment is provided to prevent ion injection by detecting a problem like a vacuum leakage in order to prevent a process failure. CONSTITUTION: The circuit for preventing process failure for ion injection equipment includes a source portion(10), a beam line portion(20), an end station portion(30), a time delay unit(62) and an error signal generation unit. The source portion generates +ion in order to perform ion injection. The beam line portion moves the +ion generated at the source portion. The end station portion injects the +ion moved via the beam line portion into a wafer. The time delay unit starts operation in response to a low vacuum pumping starting signal for making the end station portion low vacuum, finish the operation in response to a ion injection starting signal, and generates an output signal when the ion injection starting signal is not input within a predetermined time. The error signal generation unit generates an error signal in response to the output signal of the time delay unit, and generates a hold signal in order to stop the ion injection operation.
申请公布号 KR20000015350(A) 申请公布日期 2000.03.15
申请号 KR19980035222 申请日期 1998.08.28
申请人 FAIRCHILD-KOREA SEMICONDUCTOR LTD. 发明人 SHIN, IN-DONG
分类号 H01L21/265;(IPC1-7):H01L21/265 主分类号 H01L21/265
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