Method for improving the radiation resistance of silicon transistors

摘要

A method for improving the radiation resistance of silicon transistors of the type having silicon oxide cover layer in which a transistor or a silicon wafer with several transistor structures therein is exposed to electron radiation with an energy below 150 keV for a dose of between 109 and 1010 rad at the boundary layer between the silicon and the silicon oxide cover layer while being at a temperature of between 200 DEG and 300 DEG C. After the irradiation the transistor or silicon wafer is annealed for at least 10 hours at a temperature of between 200 DEG and 300 DEG C while a voltage of at least 0.3 V is applied in the forward direction between the emitter and the base terminal of the transistor or the transistor structures.