发明名称 EXHAUST GAS PRESSURE CONTROL DEVICE OF THE DIFFUSION PATH FOR MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 PURPOSE: An exhaust gas pressure control device of the diffusion path for manufacturing a semiconductor device is provide to automatically maintain the pressure within a diffusion path to prescribed set value. CONSTITUTION: The exhaust gas pressure control device of the diffusion path for manufacturing a semiconductor device comprises: a pressure sensor(28) mounted in a exhaust line for sensing the pressure within the diffusion path(20); a pressure control unit(32) comparing the sensing signal of said sensor and prescribed value to generate the control signal controlling the pressure in accordance with the difference between them; and a pressure adjusting unit opened and closed by the control signal of said pressure control unit. Therefore, according to the present invention, the internal pressure of said diffusion path can be maintained in prescribed level.
申请公布号 KR20000014874(A) 申请公布日期 2000.03.15
申请号 KR19980034492 申请日期 1998.08.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, BOO-CHEOL;AHN, EUNG-YONG
分类号 H01L21/22;(IPC1-7):H01L21/22 主分类号 H01L21/22
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