发明名称 |
MEMORY LOGIC COMPLEX INTEGRATED CIRCUIT APPARATUS HAVING DRAM AND BUFFER MEMORY AND ERROR DETECTION METHOD OF DRAM |
摘要 |
PURPOSE: A memory logic complex integrated circuit apparatus having a dynamic random access memory(DRAM) and a buffer memory is provided to detect an error of the DRAM under the normal operation. CONSTITUTION: The memory logic complex integrated circuit apparatus having a dynamic random access memory(DRAM) and a buffer memory comprises: a data input/output part(111); a data extension part(121); a built in self test(BIST) circuit(131); the first to the third selection part(143); a buffer memory(151), a dynamic random access memory(DRAM)(161); a logic circuit(171); an output control part(181); and a selection control part(191). Thereby, it is possible to reduce the magnitude of the memory logic complex integrated circuit apparatus and to know exactly the operation speed of the DRAM under the normal operation.
|
申请公布号 |
KR20000015685(A) |
申请公布日期 |
2000.03.15 |
申请号 |
KR19980035722 |
申请日期 |
1998.08.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWAK, JIN SEOK |
分类号 |
G11C11/407;G01R31/3185;G11C7/10;G11C29/38;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/407 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|