| 摘要 |
PURPOSE: A double thin film transistor(TFT) nondestructive readout ferroelectric random access memory(FRAM) and operating method of the same is provided to read and write by using only a word line, a plate line and a bit line without a special bit line for reading and writing. CONSTITUTION: In the FRAM including a ferro-electric capacitor having a bottom electrode, a ferroelectric and a top electrode, and TFTs having a first thin film layer and a gate correspond to each memory cell on the ferro-electric capacitor, a double TFT nondestructive readout FRAM comprises a first semiconductor thin film layer having a first source, a first channel and a first drain, a second semiconductor thin film composed of a top electrode having a second source, a second drain and a second channel, wherein the second semiconductor thin films are arranged for the second source to be a gate of the TFT, a plate lines composed of a bottom electrode formed as a pattern on one direction stripe separately. The FRAM also includes plugs connecting the first sources with the second channels and the second sources electrically, bit lines formed on a stripe in parallel with the plate line for connecting with the first drains electrically, and word lines having the gates formed in a pattern on the stripe.
|
