INSULATED GATE BIPOLAR TRANSISTOR HAVING A TRENCH GATE STRUCTURE

摘要

PURPOSE: An insulated gate bipolar transistor having a trench gate structure is provided to control the operation of a parasitic thyristor by reducing the voltage applied to a pn junction between an emitter region and a base region. CONSTITUTION: In an insulated gate bipolar transistor(IGBT) having a trench gate structure, a channel blocking region highly doped with p-type impurities is partially formed between a p-type base region and a highly doped n-type emitter region in which a conduction channel is formed. A part of the emitter region is directly contacted with the base region and a channel blocking layer is inserted between another part of the emitter region and the base region. In the region where a channel blocking region is inserted, electronic current from the emitter region cannot flow vertically to a drift region. The electronic current flows horizontally to a direct contact region between the emitter region and the base region and flows to the drift region. Therefore, a voltage drop is caused by electronic current flowing horizontally in the emitter region and a latch-up phenomenon in which a parasitic thyristor turns on is controlled due to a voltage drop of the junction between the emitter region and the base region.