| 摘要 |
A mask pattern generating method capable of automatically arranging phase shifters efficiently without any discrepancies and to correct a line width difference caused by different densities of fine patterns; wherein shapes and phases of a plurality of phase shift patterns are determined based on positional relationships of a plurality of fine patterns, and the phases are determined so as to give a phase difference of the two sides of the fine patterns of 180 degrees. For example, a plurality of fine patterns are extracted from already designed element shape patterns, unit patterns of at least a predetermined width required for cancelling light interference are arranged at the two sides in the direction of fine line width for each of the extracted plurality of the fine patterns, and a plurality of phase shift patterns are generated by OR processing of the unit patterns etc. Further, when there is a phase mismatch giving a phase difference of 0 degree, the phase mismatch is eliminated by changing the pattern such as dividing the shift pattern after layout compression etc. in accordance with need. When generating a mask pattern used for said ordinary exposure, a size of a light blocking pattern on said mask for ordinary exposure superposed at a position corresponding to a said fine pattern on said mask for high resolution exposure is changed in a direction reducing a line width difference after image-development caused by the different densities of said fine patterns. |
