发明名称 Process for producing high-purity ruthenium
摘要 A process comprises forming ruthenium tetroxide by blowing ozone-containing gas into crude ruthenium powder while hypochlorous acid is being added to the powder, allowing a hydrochloric acid solution to absorb the ruthenium tetroxide, evaporating the solution to dryness, and roasting the RuOCl3 crystals thus obtained in a hydrogen atmosphere. Thus a high-purity ruthenium material for thin film deposition, typically sputtering targey, is obtained which contains less than 1 ppm each of alkali metal elements, less than 1 ppm each of alkaline earth metal elements, less than 1 ppm each of transition metal elements, less than 10 ppb each of radioactive elements, a total of less than 500 ppm of carbon and gaseous ingredient elements, the material having a purity of ruthenium of at least 99.995% excluding the gaseous ingredient elements.
申请公布号 US6036741(A) 申请公布日期 2000.03.14
申请号 US19980116616 申请日期 1998.07.16
申请人 JAPAN ENERGY CORPORATION 发明人 SHINDO, YUICHIRO;SUZUKI, TSUNEO
分类号 C22B11/06;B22F9/22;C22B61/00;C23C14/06;C23C14/34;H01L21/203;H01L21/8246;H01L27/10;H01L27/105;(IPC1-7):C21B11/10;B22F1/00;C22F1/14 主分类号 C22B11/06
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