| 摘要 |
A base is provided with a gas outlet pipe and a gas inlet pipe. A bell jar is placed on top of the base with an O-ring interposed between them. Thin-film solar cells and a Se powder are placed in a recess formed in a lower heating jig, and the lower heating jig is positioned on the base. An upper heating jig is placed on top of the lower heating jig. The upper heating jig is vertically moved by a vertically actuating mechanism. The upper and lower heating jigs are heated with a heater so as to react Se with the thin-film solar cells, whereby a CuInSe2 alloy film is formed. In a method of manufacturing a thin-film solar cell, a molybdenum layer and a copper layer are formed on a substrate by sputtering. A selenium-dispersed indium layer is formed on the copper layer in a solution, which includes indium ions and dispersed selenium colloid, by electrodeposition. The thus formed selenium-dispersed indium layer and the selenium are heated in a sealed container. Alternatively, a conductive substrate is plated in a solution comprising copper ions and selenium ions, so that a copper-selenium layer is formed on the conductive substrate. The thus plated substrate is further plated in a solution comprising indium ions and selenium ions, so that an indium-selenium layer is formed on the copper-selenium layer. As a result, a pre-cursor is completed. Then, this precursor is subjected to heat treatment.
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