| 摘要 |
A UMOS semiconductor device has a surge absorbing structure around a drain lead region. A surge absorbing region such as an anode region or a region forming a punch-through or reach-through structure is formed near the drain lead region, and surrounded by a source region or source regions. The surge absorbing region forms a diode such as a zener diode with a highly doped buried layer or a drain region. With the diode, the surge absorbing structure controls the electric field around the drain lead region and thereby protects the gate insulating film from being damaged by a drain surge.
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