发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To reduce a consumption current at a standby time in a semiconductor integrated circuit using a plurality of CMOS circuits using a small MOS transistor. SOLUTION: The device parameter of a switching transistor S1 is set to that the leakage current of the S1 for composing a power supply switch that is turned off at a standby time becomes smaller than the total of the sub threshold current of a p-channel of n-channel MOS in an off state of a plurality of CMOS circuits Ci. As a result, the current of a plurality of CMOS circuits C1 at a standby time becomes a small leakage current of the switching transistor S1, and not a large sub threshold current of the Ci using a small MOS.
申请公布号 JP2000076854(A) 申请公布日期 2000.03.14
申请号 JP19990169312 申请日期 1999.06.16
申请人 HITACHI LTD;HITACHI DEVICE ENG CO LTD 发明人 KAWAHARA TAKAYUKI;KAWAJIRI YOSHIKI;AKIBA TAKESADA;HORIGUCHI SHINJI;WATABE TAKAO;KITSUKAWA GORO;KAWASE YASUSHI;TACHIBANA RIICHI;AOKI MASAKAZU
分类号 G06F1/32;G11C11/407;G11C11/413;G11C27/02;H01L21/8242;H01L27/108;H03K19/00;H03K19/0948 主分类号 G06F1/32
代理机构 代理人
主权项
地址